| PART |
Description |
Maker |
| GBU410-G |
Bridge Rectifiers, V-RRM=1000V, V-DC=1000V, I-(AV)=4A
|
Comchip Technology
|
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| UF4001E UF4002E UF4003E UF4004E UF4005E UF4006E UF |
Ultra Fast Recovery Pack: A-405
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 1.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT 1.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT?/a> 1.0A
|
Gulf Semiconductor
|
| GS1A GS1B GS1D GS1G GS1J GS1K GS1M |
Standard Recovery Pack: SMA
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 1.0A
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT 1.0A
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT?/a> 1.0A
|
Gulf Semiconductor
http://
|
| IRFBG20 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)
|
IRF[International Rectifier]
|
| UF5400 UF5401 UF5402 UF5403 UF5404 UF5405 UF5406 U |
Ultra Fast Recovery Pack: DO-201AD
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 3.0A
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT 3.0A
|
Gulf Semiconductor
|
| IRHY7G30CMSE |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
|
International Rectifier
|
| RHRU75100 RHRU7590 FN3925 RHRU7570 RHRU7580 |
75A/ 700V - 1000V Hyperfast Diodes
From old datasheet system
75A 700V - 1000V Hyperfast Diodes
75A, 700V - 1000V Hyperfast Diodes
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| RHRP8100CC FN3965 |
8A/ 1000V Hyperfast Dual Diode
From old datasheet system
8A, 1000V Hyperfast Dual Diode
|
Intersil Corporation
|
| APT17F100B APT17F100S |
N-Channel FREDFET 1000V, 17A, 0.80Ω Max, trr ?45ns
N-Channel FREDFET 1000V, 17A, 0.80ヘ Max, trr ÷245ns
|
Microsemi Corporation
|
| APT1001R1BN APT1001R3BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
LJT 56C 48#20 8#16 PIN RECP
Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No N沟道增强型高压功率MOSFET
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
